A surface-normal optoelectronic fusion device isprovided which comprises a first semiconductor layer of afirst electroconductive type, a second semiconductor layerof a second electroconductive type having a polarity inverseto that of said first electroconductive type, asemiconductor active layer, a third semiconductor layer ofthe first electroconductive type, and a fourth semiconductorlayer of the second electroconductive type, which are formedon a semiconductor sabstrate in this order. Said second andthird layers are larger in forbidden band width than saidactive layer, said second layer is smaller in forbidden bandwidth than the junction part of said first and secondlayers, and said third layer is smaller in forbidden bandwidth than the junction part of said third and fourthlayers. A high resistance range/ranges is/are formedvertically passing through said active layer so as tosurround its luminous range and to have resistance higherthan that of the luminous range. By providing the highresistance range/ranges as shown above, an ineffectivecurrent to be flowed out of the luminous range can beoutstandingly reduced, and by setting the forbidden bandwidths as shown above, carriers and a light can be easilyconfined thereunto. It is preferable that said first andfourth layers include layers serving to act as a reflectingmirror and said active layer is sandwiched by these layers.Laser emission can be made under the turn-on condition.
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