Field effect transistor with thin barrier layers and a thin doped layer

摘要

This transistor includes at least one first stack (6) of semiconductor conduction layers and at least one second stack (8) of semiconductor layers with a single highly doped thin layer (18) within the second stack endowing it with the character of a donor of mobile electrical charges, which stacks are overlaid and supported by a substrate (2), and at least two potential barriers (17, 19) situated in the second stack on either side of the doped thin layer so as to reduce the concentration of carriers in this second stack, a metal gate (G) resting on the second stack in order to modify the concentration of charge carriers in the first stack, two ohmic contacts (S, D) arranged on one of the stacks, on either side of the gate, acting as source and drain. IMAGE