- The field effect transistor with a thin barrier layers and a thin, doped layer

摘要

This transistor comprises at least a first stack (6) of semiconductor layers - conducting state and at least a second stack (8) of semiconductor layers - conductive, donor of electric charges are superposed and supported by a substrate (2), optionally at least a potential well (12) in the first stack in order to increase the concentration of carriers in this first stack, and at least a potential barrier (18) in the second stack in order to reduce the concentration of carriers in this second stack, a metal grid (g) resting on the second stack in order to modify the concentration of charge carriers in the first stack, two ohmic contacts (s, d) arranged on one of the stacks, on either side of the grid, playing the role of the source and drain.