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DEPOSITION OF SILICON DIOXIDE FILMS AT TEMPERATURE AS LOW AS 100í• BY LPCVD USING ORGANODISILANE SOURCES
DEPOSITION OF SILICON DIOXIDE FILMS AT TEMPERATURE AS LOW AS 100í• BY LPCVD USING ORGANODISILANE SOURCES
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机译:使用有机二硅烷源通过LPCVD在低至100?•的温度下沉积二氧化硅薄膜
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摘要
Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100 DEG C with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.
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