Horizontal Multi-Wavelength Laser Diode Using Liquid-Phase Epitaxial Characteristics and Its Fabrication Method

摘要

The present invention relates to a horizontal multi-wavelength laser diode using liquid phase epitaxy, comprising: 1) forming a current confined layer on a substrate; 2) forming two V-grooves on the entire surface of the substrate on which the current confined layer is formed; 3) forming an insulating film on the current limiting layer and the substrate on which the surface of the one of the two grooves is exposed; 4) P-AlGaAs, which is a P-type cladding layer, / P-AlGaAs / P-AlGaAs which is a first active layer, and / or n-type cladding layer are formed on a current limiting layer and a substrate on which a surface is exposed by a liquid phase epitaxial growth method-sequentially forming n-AlGaAs, which is a clad layer, and AlGaAs, which is a layer of GaAs and an anti-growth layer; 5) removing the insulating layer; 6) P-AlGaAs, which is a P-type cladding layer, P-AlGaAs, which is a P-type cladding layer, and P-AlGaAs, which is a second active layer, and / Layered n-AlGaAs and a GaAs layer are successively formed on a single chip, so that two horizontal laser diodes can be mounted on one chip.;As a result, by controlling only the aluminum composition ratios of the first and second active layers to be equal to or different from each other, 1) it is possible to select a wavelength suitable for the system, and the pick-up module can be simplified, 2) If the wavelength of the second active layer is the same, when the pick-up module is broken by one laser diode, only the electrode selection of the other laser diode is needed, so that it is not necessary to replace the module. 4) Since the heat dissipation of the device is proportional to the surface area of the substrate, it is necessary to use a laser diode (one laser per chip) Wavelength laser diode capable of achieving the same heat releasing effect as that of a conventional multi-wavelength laser diode with high reliability.