A pattern shape evaluation method in a photomask, a photomask, a method of manufacturing a photomask, a method of forming a pattern of a photomask, and an exposure method

摘要

The pattern in the pico mask used in the photolithography process, which can accurately evaluate the correctness of the pattern correction for the optical proximity effect within the respective ranges of the pattern size allowance, the exposure light allowance, and the defocus tolerance, A shape evaluation method is provided. In the pattern shape evaluation method, a plurality of evaluation patterns in a photomask are set, and two margins are set during the three margins, and the amounts related to the other margins are converted into variation amounts, A transfer pattern is obtained in accordance with a pattern and the size of the transfer pattern is determined at the position of the transfer pattern corresponding to the predetermined plurality of upper measurement points on the evaluation pattern. And the minimum allowable value of the change amount in the region of the evaluation pattern is determined as the other allowance, and the allowance obtained in the evaluation pattern is compared.