Photomask-pattern-shape evaluation method, photomask, photomask manufacturing method, photomask-pattern forming method, and exposure method

摘要

A pattern-shape evaluation method for a photomask used in a photolithography process is provided in order to accurately evaluate pattern corrections performed against the optical proximity effect within mask-line-width latitude, exposure latitude, and the depth of focus. The pattern-shape evaluation method comprises the steps of: specifying a plurality of evaluation patterns to be formed on a photomask and specifying two of the three kinds of latitude; obtaining the transfer pattern corresponding to each of the evaluation patterns with a quantity related to the remaining latitude being changed as a changing quantity; obtaining the sizes of portions on the transfer pattern at the positions on the transfer pattern corresponding to a plurality of measurement points specified in advance on each of the evaluation patterns; and obtaining the minimum value of the changing quantity as the remaining latitude within the two kinds of latitude specified according to the obtained sizes of the transfer pattern and comparing the obtained latitude for each of the evaluation patterns.