An NMOS transistor having a source, a drain, and a gate formed in a semiconductor substrate, wherein a material layer having a potential lower than that of the silicon substrate in the silicon substrate between the source and the drain is provided. Device.;According to the present invention, a parasitic bipolar transistor formed of a source substrate drain is quickly driven to form a path through which an overcurrent flows, in a substrate. Thus, the overcurrent is prevented from flowing into the chip, and the chip is protected from the overcurrent generated by the ESD.
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