FIELD: measurement technology. SUBSTANCE: method of measurement of electrophysical parameters of semiconductors is based on application to one surface of semiconductor element of constant of modulated electric field changing along surface and on measurement of transfers electric voltage having modulation frequency. For increase of precision and expansion of measurement range spatial period of alternating electric field is kept constant and dependence of transverse electric voltage on frequency of modulated electric field is measured which is later used to asses parameters of surface of semiconductor. Device for realization of method incorporates semiconductor plate with dielectric layer deposited on one surface of plate, metal electrode on outer surface of dielectric layer, metal contact for plate. Second layer of dielectric is deposited on other side of plate. Two metal electrodes forming interdigital structure are deposited on outer surface. Device may have each dielectric layer made of two dielectrics. Mica and layer of silicon dioxide deposited on semiconductor plate are used in the capacity of dielectrics. EFFECT: increased precision and expanded measurement range.
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