A method for producing a vertical power component with a reduced minority carrier life in the drift path

摘要

The vertical power component has a lightly-doped epitaxially grown semiconductor layer as a drift line. The minority carrier lifetime is reduced by recombination centres in the drift line. The epitaxial growth of the lightly-doped semiconductor layer is interrupted to implant non-doped ions in the epitaxially grown layer. After the interruption the epitaxial growth of the lightly-doped semiconductor layer is completed. USE/ADVANTAGE - For mfr. of HVDMOS transistor, IGBT, diode etc. Reduces minority carrier lifetime with currently available equipment. Can be used for intelligent power semiconductors.