Thyristor with a reduced minority carriers - service life and a method for producing the same

摘要

PROBLEM TO BE SOLVED: To control a lifetime of a few carriers, improve the trade-off relationship between an on voltage and a turn-off time, and attain high frequency and low loss by a method, wherein first and second ion implantation regions are formed in a position near a first electrode in a second semiconductor layer and in a position near a second electrode. ;SOLUTION: In a space above a face of a P-diffused layer 103 provided with a cathode electrode 106 (hereinafter, called a K face) and a face of a P⁺-diffused layer 102 provided with an anode electrode 105 (hereinafter, called an A face), shield bodies 110, 120 formed respectively with a metal plate are arranged. The shield bodies 110, 120 have a plurality of partial opening parts HL without completely shielding the K face and A face. If high energy heavy ion beams 10 are irradiated thereto, the high energy heavy ion beams 10 are implanted from the opening part HL of the shield bodies 110, 120, and an ion implantation region 11 is partially formed. A life time of a few carriers can be thereby controlled.;COPYRIGHT: (C)1997,JPO