首页> 外国专利> method for the treatment of the engraved surface of a semiconductor or halbisolierers, by such a procedure processing integrated circuits and apparatus for anodic oxidation for implementing such a method

method for the treatment of the engraved surface of a semiconductor or halbisolierers, by such a procedure processing integrated circuits and apparatus for anodic oxidation for implementing such a method

机译:通过这样的程序处理集成电路或用于进行这种方法的阳极氧化的装置的用于处理半导体或卤化硅石的雕刻表面的方法

摘要

Process for the treatment of an etched surface of a semiconducting or semiinsulating body. Also, integrated circuits obtained by such a process and an anodic oxidation apparatus for making use of such a process. The invention finds application in the field of the manufacture of integrated circuits with ultrafine detail (for dimensions smaller than a micron) and in particular for the production of electrooptical devices. …??The invention is characterised especially in that an anodic oxidation process controlled in respect of voltage and current is carried out and the oxide layer of controlled thickness is then partially stripped, in particular, so as to improve the resumption of epitaxy. …IMAGE…
机译:处理半导体或半绝缘体的蚀刻表面的方法。而且,通过这种方法获得的集成电路和利用这种方法的阳极氧化装置。本发明可用于具有超精细细节(尺寸小于一微米)的集成电路的制造领域,特别是用于电光器件的制造领域。 …………………………………………………………………………………………………本发明的特征特别在于,进行了对电压和电流进行控制的阳极氧化处理,然后,特别是部分地剥离了控制厚度的氧化层,从而提高了外延的恢复。 …<图像>…

著录项

  • 公开/公告号DE69211771D1

    专利类型

  • 公开/公告日1996-08-01

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM PARIS FR;

    申请/专利号DE19926011771T

  • 发明设计人 IZRAEL ALICE F-77400 MEAUX FR;

    申请日1992-04-22

  • 分类号C25D11/32;

  • 国家 DE

  • 入库时间 2022-08-22 03:41:07

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