A method for the treatment of the engraved surface of a semiconductor or, generally half insulation, as a result of such a method of integrated circuits produced, as well as apparatus for anodic oxidation, for carrying out such a process

摘要

The present invention relates to a process for the treatment of an engraved surface of a semi conducting or insulating semi-rigid -. It also relates to the integrated circuits obtained according to such a process and apparatus for anodic oxidation for implementing such a method. The present invention finds application in the field of manufacture of integrated circuits to details ultrafine (for size less than one micron) and in particular for the production of devices electro -. & br / the invention is characterized in that it performs an anodic oxidation is controlled by the voltage and current to be peeled the surface on a controlled thickness, so as, in particular, to improve the renewal of epitaxial growth.