An antifuse element provided on a semiconductor device comprises a bottom electrode, an antifuse material layer, and a top electrode. At least the uppermost portion of the bottom electrode is made of metallic silicide in which the metal composition ratio is set to greater than the stoichiometry composition ratio. The metallic silicide is obtained by silicidizing the metal at a temperature of 400°- 700° C. The crystal orientation of the thus formed metallic silicide is at random, and therefore the surface of the bottom electrode made of metallic silicide becomes flatter and smoother. The metal component of the metallic silicide is effectively used in the forming of the filament when a breakdown voltage is applied to the selected electrodes for an electrical connection.
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