Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain

摘要

An elevated source/drain structure is described in which the channel region is thinned by local oxidation and wet etch while the source/drain region remained thick. This structure achieves source/drain resistances as small as 300 ohm-&mgr;m for NMOS, which makes possible high drive currents in deep submicron thin-film SOI/MOSFET.