首页> 外国专利> CHAOS TREATMENT FILM FORMING DEVICE, CHAOS TREATMENT FILM FORMATION AND CHAOS TREATMENT FILM FORMING MEDIUM

CHAOS TREATMENT FILM FORMING DEVICE, CHAOS TREATMENT FILM FORMATION AND CHAOS TREATMENT FILM FORMING MEDIUM

机译:混沌处理膜形成装置,混沌处理膜形成和混沌处理膜形成介质

摘要

PROBLEM TO BE SOLVED: To make magnetic anisotropy uniform and to stabilize the formation of low-noise magnetic film formation by superposing the waveforms and phase waveform by chaos angle control on the voltage to be applied between a substrate and an electrode at the time of sputtering. ;SOLUTION: The central hole of the substrate S is engaged with the bottom end of surface wave vibrator 16 disposed in a vacuum chamber 11 and a fixing member 17 is pressed thereto from the lower side thereof to detain the substrate S. On the other hand, a specified target T is placed on the electrode 22 facing the substrate S and the inside of the vacuum chamber 11 is evacuated to and held at the specified vacuum degree. An inert gas, such as Ar is then introduced from an introducing port 11a into the chamber; thereafter, a DC or high-frequency voltage is applied between the substrate S and the electrode 22. At that time, the chaos waveforms formed by a chaos generator having the phase control and a coupler 202 are superposed on the voltage to be applied, by which sputters are generated. As a result, the thin films F having a chaos structure are obtd. on the rear side surface of the substrate S accompanied with the annealing effect by the chaos phase control.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:通过在溅射时在基板和电极之间施加的电压上通过混沌角控制来叠加波形和相位波形,从而使磁各向异性均匀并且稳定低噪声磁性膜的形成, 。 ;解决方案:将基板S的中心孔与设置在真空室11中的表面波振动器16的底端接合,并从其下侧向其按压固定部件17以固定基板S。然后,将指定的靶材T放置在面对基板S的电极22上,并将真空室11的内部抽真空并保持在指定的真空度。然后从导入口11a将惰性气体如Ar导入腔室中。之后,在基板S和电极22之间施加直流或高频电压。此时,通过将具有相位控制的混沌发生器和耦合器202形成的混沌波形叠加在要施加的电压上,通过产生哪些溅射。结果,形成了具有混乱结构的薄膜F。 ;通过混沌相位控制具有退火效果的衬底S的背面上。COPYRIGHT:(C)1997,JPO

著录项

  • 公开/公告号JPH09157845A

    专利类型

  • 公开/公告日1997-06-17

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19950317747

  • 申请日1995-12-06

  • 分类号C23C14/54;C23C14/50;G11B5/82;G11B5/84;

  • 国家 JP

  • 入库时间 2022-08-22 03:36:02

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