MANUFACTURE OF PMOS TRANSISTOR BY DIFFUSION FROM DOPED SILICON DIOXIDE FILM

摘要

PROBLEM TO BE SOLVED: To solve the dispersion of buried damages or the array of burying by diffusing boron to polysilicon from silicate glass, in which boron is doped onto a polysilicon gate layer, when the thin polysilicon gate layer is deposited on a thin gate oxide. ;SOLUTION: Partially manufactured CMDS structure having a thin gate oxide layer 9 and thin polysilicon gate layers 17, 19 on the thin gate oxide layer 9 is constituted. A glass layer 13 having the boron-doping species of the polysilicon gate layer 19 deposited on a window on an N-type region 5 is deposited, and N-type impurities are doped to a polysilicon section deposited on a window on a P-type region 3. Structure formed for diffusing boron from the glass layer 13 to the polysilicon gate layer 17 deposited on the window on the N-type region 5 is heated. The glass layer 13 is removed, and the manufacture of a CMOS device is completed.;COPYRIGHT: (C)1997,JPO