STABILITY IMPROVE MINORITY CARRIER SEMICONDUCTOR DEVICE AND ITS IMPROVING METHOD

摘要

PROBLEM TO BE SOLVED: To improve the operational stability of a light-emitting semiconductor device by a method wherein a region, where impurities are doped from the group of deep level impurities reactive impurities and shallow compensating impurities, is provided adjacent to an active region. ;SOLUTION: In the case of a III-V group semiconductor material, O can be turned into impurities of a deep level, reactive impurities, with which guttering or passivation can be provided, and shallow compensating impurities. In the case of the LED of (Al_xGa_1-x)_0.5In_0.5P, its reliability can be enhanced by feeding O into a P-type confinement layer 14 in a controllable manner by making the best use of the doping source of O. When O in the density of at least from 1×10¹⁶ cm^-3 to 5×10¹⁹ cm^-3 is provided to the P-type confinement layer 14, the stability of a semiconductor element can be improved. The operational stability of the best light-emitting semiconductor element can be improved, when a doping of about 1×10¹⁸ cm^-3 in density is provided to the P-type confinement layer 14.;COPYRIGHT: (C)1996,JPO