METHOD FOR GROWING SILICON CARBIDE CRYSTAL AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a smooth carbon surface on a substrate surface by etching an α-SiC crystal substrate with a hydrogen-contg. gas, then epitaxially growing SiC with glass contg. silicon and carbon at a higher temp. ;SOLUTION: The α-SiC substrate is etched by the gas contg. hydrogen (for example, a gaseous mixture composed of hydrogen and hydrogen chloride) at the first temp. in a first stage. The gas contg. the silicon and carbon (e.g.; a gaseous mixture composed of gaseous silane and gaseous propane) is supplied onto this SiC substratie at the second temp. higher than the first temp. to epitaxially grow the SiC on the substrate in a second stage. The epitaxially grown SiC substrate is cooled to form the smooth carbon surface having good quality on the surface of the SiC substrate in a third stage. The substrate is preferably etched with the gas contg. the hydrogen at a third temp. lower than the first temp. to remove the spherical matter generated in the first stage between the first stage and the second stage.;COPYRIGHT: (C)1997,JPO