PLANAR DOPE HEMT SEMICONDUCTOR WAFER AND PLANAR DOPE HEMT

摘要

PROBLEM TO BE SOLVED: To increase the electron mobility of a two-dimensional electron gas in the case where metal organic vapor phase growth is used, to the same level as in the case where molecular beam epitaxy is used. ;SOLUTION: A channel layer is formed on a plane slightly inclined from a (100) plane of a GaAs substrate. An non-dope Al_xGa_1-xAs layer which is a first layer of a carrier supply layer is formed on the channel layer, and a high-density n-type planar dope layer which is a second layer of the supply layer is formed on the first layer. Then, a Al_yGa_1-yAs layer which is a third layer of the supply layer is formed on the second layer, thereby constituting a semiconductor wafer. In this case, the Al mixed crystal ratio x of the non- dope Al_xGa_1-xAs layer is set to 0.4 or greater. Using this semiconductor wafer, an HEMT is manufactured.;COPYRIGHT: (C)1997,JPO