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METHOD FOR GROWING HEXABORIDE RARE EARTH SINGLE CRYSTAL

机译:六方硼酸盐稀土单晶的生长方法

摘要

PROBLEM TO BE SOLVED: To obtain the above single crystal which does not include crystal defects, is useful as a high-luminance thermion radiative material and has a long life by growing the single crystal under specific conditions in a method for growing the specified hexaboride rare earth single crystal by a floating zone method. ;SOLUTION: This method is for growing the hexaboride rare earth single crystal expressed by formula ReB6+x [Re is La, Ce or (La, Ce); 0.05≤x≤0.2]. The single crystal is grown by using a raw material rod contg. a boron component at a ratio higher than in the stoichiometric compsn. in the method. More preferably, the B content in the raw material rod is specified to B/Re20 by atomic ratio with respect to the stoichiometric compsn. of ReB6. The speed of growing the crystal is preferably set at 0.2 to 3.0cm/hr. The rate of supplying the raw material rod to the melting zone is preferably set higher by 10 to 30% than the rate of growing the crystal.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:为了获得上述不包含晶体缺陷的单晶,可以用作高亮度热离子辐射材料,并且可以通过在特定条件下以生长指定六硼化物的方法生长单晶来获得长寿命。大地单晶采用浮区法。 ;解决方案:该方法用于生长由式ReB 6 + x [Re为La,Ce或(La,Ce)表示的六硼化物稀土单晶。 0.05≤x≤0.2]。通过使用原材料棒contg来生长单晶。硼组分的比率高于化学计量比。在方法中。更优选通过相对于化学计量成分的原子比将原料棒中的B含量规定为B / Re> 20。 ReB 6 。晶体的生长速度优选设定为0.2〜3.0cm / hr。原料棒向熔化区的供给率最好设定为比晶体的生长率高10%至30%。;版权:(C)1997,JPO

著录项

  • 公开/公告号JPH09169597A

    专利类型

  • 公开/公告日1997-06-30

    原文格式PDF

  • 申请/专利权人 NATL INST FOR RES IN INORG MATER;

    申请/专利号JP19950349874

  • 发明设计人 ISHIZAWA YOSHIO;OTANI SHIGEKI;

    申请日1995-12-21

  • 分类号C30B29/10;C30B13/00;H01J37/06;

  • 国家 JP

  • 入库时间 2022-08-22 03:33:30

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