Production manner null of strain quantum well semiconductor laser component and strain quantum well

摘要

PURPOSE: To provide chiefly a strain quantum well semiconductor laser device which is capable of oscillating in a wavelength band of 1.3 micrometer, and to provide a fabrication method for a strain quantum well structure which is superior in composition controllability, and which can prevent an interface at a heterojunction from deteriorating. ;CONSTITUTION: A strain quantum well structure 4 is constituted of strain quantum well active layers 10, made of InAsP, and barrier layers 11, made of GaInAsP. In relation to a strain quantum well semiconductor laser device 1 with the strain quantum well structure 4 sandwiched between cladding layers 3 and 5, Ga_xIn_1-xAs_yP_1-y (x and y designate composition ratios, 0x1, 0y1), having a grating constant equal to InP, is employed as the barrier layer 11, and InAs_yP_1-y, having a composition ratio equal to the composition ratio y of the barrier layer 11 to a fifth group element As, is employed as the strain quantum well active layer 10.;COPYRIGHT: (C)1993,JPO&Japio