Resistor formation formation manner and metal organic matter resistor film null to insulating substrate

摘要

PURPOSE:To form a resistor layer having a uniform thickness on an insulating base surface by attaching with pressure a metallo-organic resistor layer of a metallo-organic resistor film on the insulating base surface. CONSTITUTION:A metallo-organic resistor film F cut into a proper size is arranged such that its metallo-organic resistor layer 22' contacts with the surface of an insulating base 2. The metallo-organic resistor film F is pressed on the surface of the insulating base 2 by a heater head 24 heated to about 120 deg.C. At this time, the metallo-organic resistor layer 22' of the metallo-organic resistor film F is softened slightly and attached with pressure on the surface of the insulating base 2. When the insulating base 2 having the metallo-organic resistor film F attached thereto is baked in an infrared kiln with a peak temperature 800 deg.C for about 10 minutes, a film body 21 of the metallo-organic resistor film F burns off in the kiln so that a resistor layer 3L will be formed on the surface of the insulating base 2.