METHOD OF SPEEDING UP CHANGE IN RESISTIVITY OF MONOCRYSTALLINE SILICON OBTAINED USING THE CZOCHRALSKI PROCESS

摘要

1. The method of accelerated change of resistivity of monocrystalline silicon, obtained by Czochralski's method, by means of thermal processing. Unique characteristics: Plates/elements made of monocrystalline silicon undergo thermal processing at the temperature of 400 degrees C to 670 degrees C, in inert gas atmosphere, preferably of nitrogen or argon, under the hydrostatic pressure of the gas, that exceeds 10 5 Pa. The process lasts up to 20 hours.