首页> 外国专利> ORGANIC CHLORIDES SHOWING A REDUCED EFFECT UPON THE DESTRUCTION OF THE OZONE LAYER FOR USE DURING SILICON THERMAL OXIDATION AND FURNACE TUBE CLEANING

ORGANIC CHLORIDES SHOWING A REDUCED EFFECT UPON THE DESTRUCTION OF THE OZONE LAYER FOR USE DURING SILICON THERMAL OXIDATION AND FURNACE TUBE CLEANING

机译:在硅热氧化和炉管清洁过程中,有机氯化物在臭氧层破坏后的使用效果降低

摘要

A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700 DEG C while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula CxHxClx where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.
机译:一种硅的热氧化或清洗半导体制造中使用的炉管的方法,是使硅或管暴露于700℃以上的温度,同时使含氧和通式为CxHxClx的氯代烃(其中x为2、3,或4在硅或管上。选择氯代烃以在温度下容易且完全氧化。

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