Tantalum oxide (Ta_2 O_5) formation method of semiconductor device

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming tantalum oxide (Ta ₂ O ₅ ) in a semiconductor device, and more specifically, to forming tantalum oxide, by sputtering while changing a predetermined amount of gas injected into the reaction chamber, the tantalum oxide has an insulating strength. The present invention relates to a method for forming tantalum oxide of a semiconductor device capable of improving the semiconductor device. In the present invention, a tantalum target and a substrate are corresponded to each other by a sputtering apparatus, without using a conventional PECVD method, in order to form a high dielectric constant tantalum oxide. By changing the amount of injection and ozone gas according to a certain time and proceeding deposition, it prevents the growth of silicon oxide at the interface when forming tantalum oxide, and forms tantalum oxide having a high dielectric constant with excellent film characteristics. And large capacity of DRAM device .