According to an aspect of the present invention, there is provided a means for generating a precharge enable signal (14); the differential amplifying means in accordance with an output of a differential amplifying means for receiving a driving voltage / 2 level voltage as a first input terminal according to the precharge enable signal. Drive means (12) for changing the potential of the first input terminal to be the driving voltage / 2; and connecting means (13) for connecting between the second input terminal of said differential amplifying means and a read data bus; The precharge circuit of the read data bus is used to reduce the swing width of the read data bus, which is the output of the sense amplifier, from the drive voltage (VCC) to the drive voltage (VCC) / 2, thereby improving the speed characteristics of the memory product. It would be.
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