首页> 外国专利> PSEUDO SRAM COMPRISING PAGE ACTIVE CIRCUIT TO PREVENT ERROR OPERATION OF DATA READ, IN WHICH UNSTABLE PRECHARGE BETWEEN GLOBAL DATA BUS LINES IS PREVENTED

PSEUDO SRAM COMPRISING PAGE ACTIVE CIRCUIT TO PREVENT ERROR OPERATION OF DATA READ, IN WHICH UNSTABLE PRECHARGE BETWEEN GLOBAL DATA BUS LINES IS PREVENTED

机译:防止在全局数据总线之间预充电不稳定的情况下,包含页面活动电路的伪SRAM防止数据读取的错误操作

摘要

PURPOSE: A pseudo SRAM comprising a page active circuit to prevent an error operation of data read is provided to prevent unstable precharge between global data bus lines generated during a short transition of a page address. CONSTITUTION: A pseudo SRAM includes a row path(300) enabling a word line by detecting transition of an address signal and a column path(400) comprising a page address transition detection part(410) and a page active signal generation part(420) and a column signal control part(430). The page address transition detection part outputs a page address transition detection signal by detecting transition of a page address signal. The page active signal generation part generates a page active signal having a pulse period to precharge a global data bus line and a global data bus bar line sufficiently as to the page address transition detection signal. And the column signal control part enables a column selection signal as to the input of the page active signal.
机译:目的:提供一种包括页面有源电路以防止数据读取的错误操作的伪SRAM,以防止在页面地址的短暂过渡期间产生的全局数据总线之间的不稳定的预充电。构成:一种伪SRAM,包括通过检测地址信号的转换使能字线的行路径(300)和包括页面地址转换检测部分(410)和页面有效信号生成部分(420)的列路径(400)列信号控制部(430)。页面地址转变检测部分通过检测页面地址信号的转变来输出页面地址转变检测信号。页面有效信号生成部生成具有脉冲周期的页面有效信号,以对页面地址转变检测信号充分地预充电全局数据总线和全局数据总线条。并且列信号控制部分使能关于页面有效信号的输入的列选择信号。

著录项

  • 公开/公告号KR20040080188A

    专利类型

  • 公开/公告日2004-09-18

    原文格式PDF

  • 申请/专利权人 EXCEL FLASH CO. LTD.;

    申请/专利号KR20030015078

  • 发明设计人 KIM YEONG SEOK;

    申请日2003-03-11

  • 分类号G11C11/4193;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:01

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