Semiconductor device for transmission - reception, in particular a 1,3 um and 1,5 um

摘要

Semiconductor device of the transmission - reception, in particular to 1,3 μm and 1,5 μm. & br / & this device comprises a substrate (2) on which are integrated in a monolithic manner, the components (4, 6) having the active layers to wavelengths lambda1 and lambda2, these components emitting and detecting the light according to whether they are biased in direct or inverse. At least one intermediate component (8, 10) between these components and absorbs the light of wavelength lambda1 without absorbing the wavelength lambda2. Application in optical telecommunications.