Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI

摘要

A SiGe-HBT structure for device integration on thin-SOI substrates is disclosed. The emitter and base regions are vertical while the collector contact is lateral in the otherwise MOS-like device structure. This allows one to integrate a SiGe base, the device capacitances are reduced, and the transistor can be combined with fully- depleted CMOS in a SOI- BiCMOS technology.