Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors

摘要

A semiconductor device comprises a p-type semiconductor substrate, an n-type semiconductor well formed on the substrate and connected to a positive power supply, a p-type semiconductor source formed within the n- type semiconductor well, a p-type semiconductor layer formed within the n- type semiconductor well and having a lower impurity concentration than the p-type semiconductor source, a first gate electrode formed over a region between the p-type semiconductor source and the p-type semiconductor layer through an insulating film, an n-type semiconductor emitter formed over the p-type semiconductor layer within the n-type semiconductor well, a first conductive layer formed over the n- type semiconductor well to connect with said p-type semiconductor source.