Dynamic RAM (random access memory) with SEU (single event upset) detection

摘要

Individual cells in a memory array are structured and interconnected to permit detection and identification of the locations of errors known as Single Event Upsets (SEUs), with the correction and identification of an affected cell made using only a single parity bit for a group of cells in a memory array, eliminating the necessity for reading an entire memory in order to detect SEUs immediately, and eliminate large numbers of non- useful correction-code cells in order to increase the net useful density of cells in a memory and tolerate a larger rate of SEU events than for previous methods, additionally eliminate the need for purification of packaging materials for memory arrays by removing most radioactive materials and providing a further economic benefit by eliminating the need for organic coatings, which can cause reliability hazards, and to block alpha particles originating in packaging.