Five- and six-coordinate precursors for titanium nitride deposition

摘要

Improved precursors for use in chemical vapor deposition of thin films of titanium-based materials are provided, which are either 5- or 6- coordinate and thus sterically saturated and protected from attack of the coreactant in the gas phase. Specific precursors have the formula Ti[N(R. sup.1)(R.sup.2)].sub.x [(R.sup.3)N--C(R.sup.4)(R.sup.5)--C(R.sup. 6)(R.sup. 7)--N(R.sup.8)(R.sup.9)] .sub.y wherein each of R.sup.1, R.sup. 2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R. sup.4, R.sup. 5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3. The thin films produced include titanium nitride and amorphous titanium-silicon-nitride.