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Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device
Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device
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机译:在硅电子器件中形成硅硼二元化合物层作为硼扩散源的方法
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摘要
The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 110.sup.21 to 510.sup.22 atoms/cm. sup.3).
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