首页> 外国专利> THIN-FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND CMOS CIRCUIT USING THIN-FILM TRANSISTOR THEREOF

THIN-FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND CMOS CIRCUIT USING THIN-FILM TRANSISTOR THEREOF

机译:薄膜晶体管及其使用的薄膜晶体管和液晶显示器和CMOS电路

摘要

PROBLEM TO BE SOLVED: To provide a TFT(a thin-film transistor), reliability of which can be improved by reducing a partial temperature rise by self-heat generation without increasing the number of manufacturing processes, and a liquid crystal display with an active matrix substrate using the TFT for a driver circuit, etc. ;SOLUTION: Offset regions 7 are formed to sections (the sections oppositely faced to the end sections of a gate electrode 4) between the source-drain regions 8 and a channel region 5 in the TFT. Since a central section in the channel width direction is projected towards the sections of the source-drain regions 8 in the boundary sections 70 among the offset regions 7 and the source-drain regions 8 in high concentration, the offset regions 7 have structure, in which the offset length Loffc of the central section in the channel width direction is made longer than the offe of the edge sections.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种TFT(薄膜晶体管),其可通过在不增加制造工序数的情况下减少由于自发热而引起的局部温度上升来提高可靠性,以及具有有源的液晶显示器。解决方案:在源漏区8和沟道区5之间的区域(与栅电极4的端部相对的部分)形成偏移区域7 TFT。由于在沟道宽度方向上的中央部分以高浓度朝向边界区域70和源极-漏极区域8之间的边界部分70中的源极-漏极区域8的部分突出,所以偏移区域7具有以下结构:使中央部分在通道宽度方向上的偏移长度Loffc大于边缘部分的偏移量。;版权:(C)1998,JPO

著录项

  • 公开/公告号JPH10270699A

    专利类型

  • 公开/公告日1998-10-09

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP19970074221

  • 发明设计人 TAKENAKA SATOSHI;

    申请日1997-03-26

  • 分类号H01L29/786;H01L21/336;G02F1/136;

  • 国家 JP

  • 入库时间 2022-08-22 03:05:19

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