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THIN-FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY AND CMOS CIRCUIT USING THIN-FILM TRANSISTOR THEREOF

机译:薄膜晶体管及其使用的薄膜晶体管和液晶显示器和CMOS电路

摘要

PROBLEM TO BE SOLVED: To provide a TFT(a thin-film transistor), in which electrical characteristics can be improved largely and efficiently as compared with the TFT having self-alignment structure by adopting optimum offset gate structure or LDD structure, and a liquid crystal display panel using the TFT. ;SOLUTION: The offset length Los (μm) of an offset region 7 and the film thickness tox (μm) of a gate insulating film 2 are constituted so as to satisfy formula 4.2tox-0.05≤Los≤-8.3tox+2.5 (where 0.06≤tox) in the TFT having offset gate structure. Accordingly, the wasteful reduction of an on current at the time of a change into an offset gate is prevented.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种TFT(薄膜晶体管),与具有自对准结构的TFT相比,通过采用最佳的偏置栅极结构或LDD结构以及液体,可以大大且有效地改善电特性。液晶显示面板使用TFT。 ;解决方案:构成偏移区域7的偏移长度Los(μm)和栅极绝缘膜2的膜厚度tox(μm),以满足公式4.2tox-0.05≤Los≤-8.3tox+ 2.5(其中在具有偏置栅极结构的TFT中,0.06≤tox)。因此,防止了在转换为偏置门时浪费地减小导通电流。;版权所有:(C)1998,JPO

著录项

  • 公开/公告号JPH10270700A

    专利类型

  • 公开/公告日1998-10-09

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP19970074222

  • 发明设计人 ITO TOMOYUKI;

    申请日1997-03-26

  • 分类号H01L29/786;H01L21/336;G02F1/133;

  • 国家 JP

  • 入库时间 2022-08-22 03:05:19

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