METHOD FOR ANALYZING PARASITIC MIM STRUCTURE PART IN SEMICONDUCTOR DEVICE AND METHOD FOR ANALYZING PARASITIC MIM STRUCTURE PART IN SI SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for analyzing the parasitic MIM structure part of a semiconductor device and an Si semiconductor device in which the interconnection system can be analyzed with high sensitivity. ;SOLUTION: A region to be observed is irradiated with a laser beam 104 having irradiation efficiency of 1mW or above and variation of power supply current 112 is detected. When a parasitic MIM structure part, i.e., a parasitic insulation film 107, is irradiated with the laser beam 104, the current 112 flowing through the parasitic insulation film 107 is increased due to the temperature characteristics thereof and thereby the parasitic MIM structure can be located. On the other hand, the region to be observed is irradiated with a laser beam having wavelength of 1.0μm or longer from the rear side of the chip and variation of power supply current is detected. The light having wavelength of 1.0μm or longer transmits through an Si substrate and thereby the laser beam reaches an interconnection part. Since the current increases when the parasitic MIM structure part, i.e., the parasitic insulation film 107, is irradiated with a beam, the parasitic MIM structure can be located.;COPYRIGHT: (C)1998,JPO