SELECTIVE ETCHING METHOD OF COMPOUND SEMICONDUCTOR AND MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR DEVICE USING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To realize a processed shape, which has the fidelity to a smooth etching surface and an etching mask, by etching a wafer by the etching gas containing halogen gas, oxygen gas and nitrogen gas excepting fluorine, which is made to be plasma to the specified plasma density. ;SOLUTION: On a wafer mounting surface 15 of a substrate holder 10, a wafer 11, which has the first III-V system compound semiconductor layer containing Al and the second III-V system compound semiconductor layer laminated on the first layer, is mounted through a load lock chamber. A plasma forming chamber 3 is tightly closed. The etching gas containing halogen gas, oxygen gas and nitrogen gas excepting fluorine, which is made to be plasma to the plasma density of 10¹⁰cm^-3 or more, is introduced through an introducing port 6. Then, a gas feed device at the upstream side of the introducing port 6 is interlocked with a vacuum sucking device on the downstream side of an exhausting port 7, and the gas pressure in the plasma forming chamber 3 is controlled at the specified pressure. Thus, the etching is performed.;COPYRIGHT: (C)1998,JPO