Thin film formation manner and thin film formation thermal treatment equipment

摘要

PURPOSE:To improve quality of thin film by using plural heat-treating rooms to perform thin film formation containing purification of base plate and individually controlling temperature of raw material gas supplying to each heat-treating room. CONSTITUTION:A base plate 18 is washed in air and set on a base plate-fixing base 17 in a base plate-changing room 11 filled with inert gas such as N2. Next, the base plate is transferred to first heat-treating room 1 to remove naturally oxidized film on the surface of the base plate and subjected to pre-treatment, then oxidized by heat in O2 atmosphere. Thereafter, the first heat-treating room 1, connecting part 7 and the base plate-changing room 11 are made in inert gas atmosphere and the base plate 18 is returned to the base plate-changing room 11. Next, the first heat- treating room 1 is separated to the connecting part 7 and the connecting part 7 is connected to second heat-treating room 2. Then, the base plate 18 is transferred to the second heat-treating room 2, thus raw material gas such as silane or dopant such as phosphine is introduced into the second heat-treating room 2 with individually controlling concentration and flowing rate using temperature-controlling gas-supplying system 4 to accumulate gate electrode film. Thereafter, the base plate 18 is returned to the base plate-changing room 11.