Manner null of pulling up the Si monocrystal which controls oxygen concentration

摘要

PURPOSE: To control the oxygen density in a Si single crystal when the Si single crystal is pulled from a Si fused liquid which is doped with V group elements and housed in a crucible, by controlling the kind of rare gas to be compounded into the atmospheric gas in contact with the Si fused liquid. ;CONSTITUTION: When a Si single crystal is pulled from a Si fused liquid which is doped with V group elements by ≥1.0×10^-4 atomic% and housed in a crucible in an Ar atmosphere, the gas atmosphere in contact with the Si liquid is selected by the following way. When a Si single crystal containing 9.0×10atoms/cm³ oxygen density is to be produced, rare gas having large mass such as Kr, Xe and Rn is mixed with Ar gas. When a Si single crystal having ≤ (3.0 to 9.0)×10¹⁷atoms/cm³ oxygen density is to be formed, rare gas having small mass such as Ne and Ar is mixed with Ar.;COPYRIGHT: (C)1995,JPO