首页> 外国专利> Solder alloy or tin contact bump structure for unencapsulated microcircuits as well as a process for the production thereof

Solder alloy or tin contact bump structure for unencapsulated microcircuits as well as a process for the production thereof

机译:用于未封装微电路的焊料合金或锡接触凸点结构及其生产方法

摘要

The invention relates to a solder or tin contact bump structure and a method for the production thereof for unencapsulated microcircuits (15) comprising a substrate (15), contact pad areas (3) of aluminium formed on said substrate (15), a composite metal structure formed on the contact pad areas (3), formed of a TiW layer (7), an Au layer (4) formed thereon, and an Ni layer (5) formed on said Au layer, and a solder contact bump (6) formed on the composite metal structure (7, 4, 5). According to the invention the TiW layer (7) is sputtered in the presence of nitrogen and argon in connection with the layering, whereafter it is subject to oxygen treatment, and the Au layer (4) is formed by one deposition process only.
机译:本发明涉及用于未封装的微电路(15)的焊料或锡接触凸点结构及其制造方法,该微电路包括衬底(15),在所述衬底(15)上形成的铝的接触焊盘区域(3),复合金属由TiW层(7),在其上形成的Au层(4)和在所述Au层上形成的Ni层(5)形成的在接触焊盘区域(3)上形成的结构,以及焊料接触凸点(6)形成在复合金属结构(7、4、5)上。根据本发明,TiW层(7)在氮气和氩气存在下与该层结合溅射,然后对其进行氧处理,而Au层(4)仅通过一种沉积工艺形成。

著录项

  • 公开/公告号AU2964297A

    专利类型

  • 公开/公告日1998-01-05

    原文格式PDF

  • 申请/专利权人 ELCOTEQ NETWORK OY;

    申请/专利号AU19970029642

  • 发明设计人 JORMA KIVILAHTI;PETTERI PALM;

    申请日1997-05-30

  • 分类号H01L23/485;H01L21/283;

  • 国家 AU

  • 入库时间 2022-08-22 02:53:32

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