首页> 外国专利> Procedures for producing solder alloy or tin contact bump structures for non-encapsulated microcircuits simultaneously

Procedures for producing solder alloy or tin contact bump structures for non-encapsulated microcircuits simultaneously

机译:同时生产用于非封装微电路的焊料合金或锡触点凸点结构的程序

摘要

The invention relates to a solder or tin contact bump structure and a method for the production thereof for unencapsulated microcircuits (15) comprising a substrate (15), contact pad areas (3) of aluminium formed on said substrate (15), a composite metal structure formed on the contact pad areas (3), formed of a TiW layer (7), an Au layer (4) formed thereon, and an Ni layer (5) formed on said Au layer, and a solder contact bump (6) formed on the composite metal structure (7, 4, 5). According to the invention the TiW layer (7) is sputtered in the presence of nitrogen and argon in connection with the layering, whereafter it is subject to oxygen treatment, and the Au layer (4) is formed by one deposition process only.
机译:本发明涉及用于未封装的微电路(15)的焊料或锡接触凸点结构及其制造方法,该微电路包括衬底(15),在所述衬底(15)上形成的铝的接触焊盘区域(3),复合金属由TiW层(7),在其上形成的Au层(4)和在所述Au层上形成的Ni层(5)形成的在接触焊盘区域(3)上形成的结构,以及焊料接触凸点(6)形成在复合金属结构(7、4、5)上。根据本发明,TiW层(7)在氮气和氩气存在下与该层结合溅射,然后对其进行氧处理,而Au层(4)仅通过一种沉积工艺形成。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号