BAKING OVEN FOR THE HIGH-TEMPERATURE TREATMENT OF MATERIALS WITH A LOW DIELECTRIC LOSS FACTOR

摘要

In a baking oven (10) for the high-temperature treatment of materials with a relatively low dielectric loss factor (tan δ) by heating the material by absorption of microwave energy in a resonant chamber (16), the material to be treated (11) is placed in a partial area of the resonant chamber in which a uniform energy intensity of the microwave field is established by irradiating microwave energy over a narrow band within a tolerance range, such that in each volume element of the treatment chamber the square (E2) of the electric field intensity of the microwave field, at least in its time average, has the same value within a narrow tolerance range. The ratio V/μ3 between the resonator volume V and the wavelength μ to the power of 3 has a value around 106. A slot antenna arrangement (14) with a marked lobe characteristic is provided to feed the primary microwave radiation generated by the microwave source (13) into the resonant chamber (16). The primary radiation emitted by the antenna arrangement almost completely lightens a microwave diffuser (19). The material to be treated is placed in a partial area of the resonant cavity in which it is exclusively exposed to the secondary microwave radiation from the diffuser (19).