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BAKING OVEN FOR THE HIGH-TEMPERATURE TREATMENT OF MATERIALS WITH A LOW DIELECTRIC LOSS FACTOR
BAKING OVEN FOR THE HIGH-TEMPERATURE TREATMENT OF MATERIALS WITH A LOW DIELECTRIC LOSS FACTOR
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机译:低介电损耗因子材料的高温烘烤炉
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摘要
In a baking oven (10) for the high-temperature treatment of materials with arelatively low dielectric loss factor (tan .delta.) by heating the material byabsorption of microwave energy in a resonant chamber (16), a uniform energyintensity of the microwave field is to be achieved for example by irradiatingthe microwave energy over a broad band and/or by varying in time the frequencyof the irradiated microwave energy. The resonant chamber (16) and theradiation source (13) are tuned to each other such that the relation:(V/.lambda.3) .B 20 is satisfied. V stands for the volume of the resonantchamber (16), .lambda. for the wavelength of the microwave radiation and B itsband width. V/.lambda.3 equals at least 300 and the clear dimensions lx, lyand lz of the resonant cavity (16) in the direction of the co-ordinates x, yand z are approximately equal to the cubic root of V. The wall (161 to 166) ofthe resonant cavity is made of graphite and can be heated by a heating device(28) up to the temperature of the material to be treated. The heating deviceis arranged outside the resonant chamber, and a heat insulating envelope (38)encloses the unit of resonant cavity (16) and heating device.
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机译:在烘箱(10)中对物料进行高温处理通过加热材料使介电损耗因子(tanδ)相对较低在共振腔(16)中吸收微波能量,即均匀能量微波场的强度例如可以通过照射来实现宽频带和/或通过随时间变化的频率改变微波能量辐射的微波能量。谐振腔(16)和辐射源(13)相互调谐,使得以下关系式:(V /λ3).B 20被满足。 V代表共振的体积室(16),. lambda。微波辐射的波长带宽。 V /λ3至少等于300,净尺寸lx,ly谐振腔(16)在坐标x,y方向上的lz和lz和z大约等于V的立方根。V的壁(161至166)谐振腔由石墨制成,可以通过加热装置加热(28)达到待处理材料的温度。加热装置布置在谐振腔外,并有一个隔热外壳(38)封闭谐振腔(16)和加热装置的单元。
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