A method for the local oxidation of silicon with the use of a ions - and - diffusion barrier layer

摘要

process for local oxidation of silicon (locos) for semiconductor production, in which a barrier layer for the oxidationsprozeu00df and a subsequent feldimplantation from a keramikmaterial is formed.the keramikmaterial is one such, which is easy to silicon at low voltage can be separated and is characterized by the fact that there is a ionenhalteleistung, larger than those of siliciumnitrid. appropriate keramikmaterialien are metal oxides, titanate, carbide, glasses and ferroelektrika.