首页>
外国专利>
Method of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wirings
Method of manufacturing a semiconductor device capable of rapidly forming minute wirings without etching of the minute wirings
展开▼
机译:制造能够快速形成微小布线而不刻蚀微小布线的半导体器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
In a method of manufacturing a semiconductor device having a multilayer interconnection structure, when a silicon oxide film is formed onto an electric wiring on a semiconductor substrate by the use of plasma deposition, a first high frequency wave of a constant value is provided for producing plasma while a second high frequency wave of a pulsed amplitude having a predetermined pulse interval and a predetermined rest interval is supplied onto said semiconductor substrate. Silane gas, oxygen gas and argon gas are employed as deposition gases, wherein the argon gas is periodically supplied during a pulsed interval.
展开▼