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Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure
Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure
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机译:具有布线层的半导体器件,该布线层包括TISI2,C49或C54结构的薄膜
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摘要
A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another in said order.
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