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Optically writing erasable conductive patterns at a bandgap- engineered heterojunction

机译:在带隙工程异质结处光学写入可擦写的导电图案

摘要

A heterojunction is formed between a pair of layers of different semiconductive materials whose work function difference produces a large band offset at the heterojunction. Donor or acceptor atoms are included in one regions that when photoexcited produce free charge carriers but leave behind charged centers that keep the photoexcited carriers localized. The large barrier at the heterojunction limits recombination of the free charge carriers and the charged centers and persistent photoconductivity results. This effect is used to form light operated switches. An illustrative example uses a layer of high purity gallium arsenide forming a heterojunction with a gallium-doped layer of zinc selenide.
机译:在一对不同半导体材料的层之间形成异质结,其功函数差在异质结处产生较大的带偏移。供体或受主原子包含在一个区域中,当受光时,该区域会产生自由电荷载流子,但会留下带电中心,从而使受光载流子保持局部化。异质结处的大势垒限制了自由电荷载流子和带电中心的复合,并导致了持久的光电导性。该效果用于形成光控开关。一个说明性的例子使用了一层高纯度的砷化镓,它与镓掺杂的硒化锌层形成异质结。

著录项

  • 公开/公告号US5804842A

    专利类型

  • 公开/公告日1998-09-08

    原文格式PDF

  • 申请/专利权人 NEC RESEARCH INSTITUTE INC.;

    申请/专利号US19950493181

  • 发明设计人 TINEKE THIO;

    申请日1995-06-20

  • 分类号H01L21/20;

  • 国家 US

  • 入库时间 2022-08-22 02:38:40

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