Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric

摘要

The method of the present invention includes forming a silicon oxynitride layer on a substrate. Then, a dielectric layer with high permitivity is deposited by chemical vapor deposition on the silicon oxynitride layer. Subsequently, a rapid thermal process (RTP) anneal is performed in N.sub.2 O or NO ambient to reduce the dielectric leakage. A multiple conductive layer consisting of TiN/Ti/TiN is then formed on the dielectric layer. Then, the multiple conductive layer, the dielectric layer, and the silicon oxynitride layer are patterned to form gate structure. A plasma immersion is performed to form ultra shallow extended source and drain junctions. Side wall spacers are formed on the side walls of the gate structure. Next, an ion implantation is carried out to dope ions into the substrate. Next, a rapid thermal process (RTP) anneal is performed to form shallow junctions of the source and the drain.