WAVEGUIDE PHOTOELEMENT HAVING DISSIMILAR ENERGY BAND GAP QUANTUM WELL LAYER AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide an waveguide photoelement having at least exceeding two positions of regions with dissimilar energy band gap quantum well layer and its manufacture. ;SOLUTION: An InGaAs cap layer laminated on a quantum well layer 13, whereon at least exceeding a pair of InGaAs and InP layer is laminated after the formation of an SiO₂ coating layer, is annealed at high temperature so as to form a band gap energy conversing region wherein the energy band gap in a specific region of the InGaAs/InP quantum well layer 13 is converted. Through these procedures, an waveguide photo element having dissimilar energy band gap quantum well layer laser-oscillating in different wavelength can be manufactured.;COPYRIGHT: (C)1999,JPO